Kingston ACR256X64D3S1333C9 2GB vs Samsung M393A1G40DB0-B`B 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时
更快的读取速度，GB/s

11.9 10.4

测试中的平均数值
更快的写入速度，GB/s

8.5 5.5

测试中的平均数值

Samsung M393A1G40DB0-B`B 8GB

需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Samsung M393A1G40DB0-B`B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

11.9 10.4
写入速度，GB/s

8.5 5.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 1806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 9905624-014.A00G 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMA82GS6JJR8N-VK 16GB

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Golden Empire CL16-18-18 D4-2666 8GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

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Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB