Nanya Technology M2X4G64CB8HG5N-DG 4GB vs G Skill Intl F4-3200C16-8GTRG 8GB

总分

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB

报告一个错误

G Skill Intl F4-3200C16-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的读取速度，GB/s

17.9 13.7

测试中的平均数值
更快的写入速度，GB/s

14.8 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG5N-DG 4GB

G Skill Intl F4-3200C16-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

13.7 17.9
写入速度，GB/s

9.7 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2431 3514

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMK16GX4M2K4400C19 8GB

Corsair CMK16GX4M2K4400C19 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingston 9965640-004.C00G 16GB

Kingston 9965640-004.C00G 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB