RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-5066C20-8GVK 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs G Skill Intl F4-5066C20-8GVK 8GB

总分
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分
star star star star star
G Skill Intl F4-5066C20-8GVK 8GB

G Skill Intl F4-5066C20-8GVK 8GB

差异 规格 评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,077.3 left arrow 17.4
    测试中的平均数值
G Skill Intl F4-5066C20-8GVK 8GB 需要考虑的原因
G Skill Intl F4-5066C20-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 61
    左右 -154% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-5066C20-8GVK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 24
  • 读取速度，GB/s
    3,835.2 left arrow 19.4
  • 写入速度，GB/s
    2,077.3 left arrow 17.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    606 left arrow 3809

Nanya Technology M2Y1G64TU8HB0B-25C 1GB RAM的比较

SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5701-036.A00G 16GB

G Skill Intl F4-5066C20-8GVK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905665-021.A00G 4GB
Kingston 9905665-021.A00G 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
DSL Memory D4SS12082SH21A-A 8GB
DSL Memory D4SS12082SH21A-A 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3600C16-16GTRS 16GB
G Skill Intl F4-3600C16-16GTRS 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Essencore Limited KD4AGU880-36A180X 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM