Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M471B5273CH0-YK0 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Samsung M471B5273CH0-YK0 4GB

需要考虑的原因
Samsung M471B5273CH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 42

左右 -11% 更低的延时
更快的读取速度，GB/s

12.6 9.7

测试中的平均数值
更快的写入速度，GB/s

8.8 6.0

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M471B5273CH0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 38
读取速度，GB/s

9.7 12.6
写入速度，GB/s

6.0 8.8
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1396 2174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB