Samsung DDR3 8GB 1600MHz 8GB vs Mushkin 99[2/7/4]191[F/T] 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14.5

测试中的平均数值

Mushkin 99[2/7/4]191[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]191[F/T] 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 43

左右 -65% 更低的延时
更快的写入速度，GB/s

10.1 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Mushkin 99[2/7/4]191[F/T] 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 26
读取速度，GB/s

14.9 14.5
写入速度，GB/s

9.6 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2480

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M378A5244CB0-CTD 4GB

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Corsair CMT16GX4M2K4266C19 8GB

Corsair CMT16GX4M2K4266C19 8GB