Samsung M3 78T2863EHS-CF7 1GB vs Smart Modular SMS4WEC8C2K0446FCG 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.1

测试中的平均数值

Smart Modular SMS4WEC8C2K0446FCG 16GB

需要考虑的原因
Smart Modular SMS4WEC8C2K0446FCG 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 59

左右 -69% 更低的延时
更快的写入速度，GB/s

9.0 2,123.3

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 35
读取速度，GB/s

4,833.8 14.1
写入速度，GB/s

2,123.3 9.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

731 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R538G1601U2S 8GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

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Corsair VS1GB800D2 1GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

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Corsair CMK16GX4M4B3200C16 4GB