Samsung M378B1G73EB0-CK0 8GB vs Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

总分

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

总分

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

差异规格评论

差异

Samsung M378B1G73EB0-CK0 8GB

需要考虑的原因
Samsung M378B1G73EB0-CK0 8GB

报告一个错误

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 41

左右 -105% 更低的延时
更快的读取速度，GB/s

18.9 13.3

测试中的平均数值
更快的写入速度，GB/s

14.6 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B1G73EB0-CK0 8GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 20
读取速度，GB/s

13.3 18.9
写入速度，GB/s

8.5 14.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 3022

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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