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Samsung M378B5673EH1-CF8 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB

Samsung M378B5673EH1-CF8 2GB vs Mushkin MR[A/B]4U266GHHF16G 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Mushkin MR[A/B]4U266GHHF16G 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Mushkin MR[A/B]4U266GHHF16G 16GB 需要考虑的原因
Mushkin MR[A/B]4U266GHHF16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    12.7 left arrow 18.0
  • 写入速度，GB/s
    7.5 left arrow 13.1
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3211

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Mushkin MR[A/B]4U266GHHF16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM