Samsung M378B5773CH0-CH9 2GB vs Transcend Information JM3200HLB-8G 8GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

Transcend Information JM3200HLB-8G 8GB

需要考虑的原因
Transcend Information JM3200HLB-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 -34% 更低的延时
更快的读取速度，GB/s

15.1 12.8

测试中的平均数值
更快的写入速度，GB/s

11.5 7.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Transcend Information JM3200HLB-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 29
读取速度，GB/s

12.8 15.1
写入速度，GB/s

7.4 11.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1770 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

Crucial Technology CT51264BD160B.C16F 4GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Essencore Limited KD44GU480-26N160T 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-3400C16-16GTZ 16GB

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