Samsung M391B5673EH1-CH9 2GB vs SK Hynix GKE800SO51208-2133AH 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

更快的写入速度，GB/s

9.0 8.4

测试中的平均数值

SK Hynix GKE800SO51208-2133AH 8GB

需要考虑的原因
SK Hynix GKE800SO51208-2133AH 8GB

报告一个错误

更快的读取速度，GB/s

14 12.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

SK Hynix GKE800SO51208-2133AH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

12.8 14.0
写入速度，GB/s

9.0 8.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX32GX4M1A2666C18 32GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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Kingston 99U5471-020.A00LF 4GB

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Kingston XJ69DF-HYA 8GB

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Kingston MSI24D4U7D8MD-16 16GB

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Kingston 9965516-430.A00G 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Corsair CMK128GX4M8A2133C13 16GB

Corsair CMK128GX4M8A2133C13 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

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Corsair VS1GB800D2 1GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB