Samsung M471A1K43EB1-CWE 8GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 46
读取速度，GB/s

16.0 16.0
写入速度，GB/s

12.4 12.4
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2660 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston KHX3600C18D4/32GX 32GB

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Samsung M393B1G70BH0-YK0 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-3466C18-8GSXW 8GB

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Mushkin 99[2/7/4]205[F/T] 8GB

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Peak Electronics 256X64M-67E 2GB

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takeMS International AG TMS2GB264D083805EV 2GB

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Kllisre M378A5143EB2-CRC 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

Corsair CMSO4GX3M1A1600C11 4GB

Corsair CMSO4GX3M1A1600C11 4GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB