Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3466C16-4GVK 4GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3466C16-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3466C16-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 45

左右 -125% 更低的延时
更快的读取速度，GB/s

19.6 12.3

测试中的平均数值
更快的写入速度，GB/s

15.5 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3466C16-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 20
读取速度，GB/s

12.3 19.6
写入速度，GB/s

8.0 15.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 9905783-025.A01G 16GB

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Elpida EBJ41UF8EDU0-DJ-F 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMV32GX4M1A2666C18 32GB

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Kingston 9965604-016.C01G 8GB

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