Samsung M471B5273CH0-CH9 4GB vs Kingston KHX2666C16S4/16G 16GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Kingston KHX2666C16S4/16G 16GB

需要考虑的原因
Kingston KHX2666C16S4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 48

左右 -45% 更低的延时
更快的读取速度，GB/s

16.3 8.9

测试中的平均数值
更快的写入速度，GB/s

12.8 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Kingston KHX2666C16S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 33
读取速度，GB/s

8.9 16.3
写入速度，GB/s

5.9 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3137

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Samsung M471B5273CH0-CH9 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905713-019.A00G 4GB

A-DATA Technology VDQVE1B16 2GB

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Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

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Corsair CMD128GX4M8A2666C15 16GB

Corsair CMD128GX4M8A2666C15 16GB