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SK Hynix DDR2 800 2G 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BL16G32C16S4B.16FE 16GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.3
    测试中的平均数值
Crucial Technology BL16G32C16S4B.16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16S4B.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 77
    左右 -83% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 42
  • 读取速度，GB/s
    2,936.9 left arrow 16.3
  • 写入速度，GB/s
    1,884.0 left arrow 14.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    564 left arrow 3072

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BL16G32C16S4B.16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CMD16GX4M2B3200C14 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX3466C16D4/8GX 8GB
Kingston KHX3466C16D4/8GX 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-2666C18-8GFT 8GB
G Skill Intl F4-2666C18-8GFT 8GB
内存RAM