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SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB

SK Hynix DDR2 800 2G 2GB vs Crucial Technology BLE4G4D32AEEA.K8FD 4GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.3
    测试中的平均数值
Crucial Technology BLE4G4D32AEEA.K8FD 4GB 需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 77
    左右 -235% 更低的延时
  • 更快的写入速度，GB/s
    13.0 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 23
  • 读取速度，GB/s
    2,936.9 left arrow 17.3
  • 写入速度，GB/s
    1,884.0 left arrow 13.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2993

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB
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内存RAM
Corsair CML8GX3M2A1600C9 4GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
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内存RAM
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Kingston KP223C-ELD 2GB
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内存RAM
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A-DATA Technology AD73I1C1674EV 4GB
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V-Color Technology Inc. TL48G24S815RGB 8GB
内存RAM