SK Hynix HMT325S6CFR8C-PB 2GB vs Avant Technology J641GU49J2320NE 8GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Avant Technology J641GU49J2320NE 8GB

需要考虑的原因
Avant Technology J641GU49J2320NE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

16.7 10.9

测试中的平均数值
更快的写入速度，GB/s

12.8 6.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Avant Technology J641GU49J2320NE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

10.9 16.7
写入速度，GB/s

6.6 12.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1406 3239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSO16GX4M2A2133C15 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M378B5773DH0-CH9 2GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

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Chun Well Technology Holding Limited D4U1636144B 16GB

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Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB