SK Hynix HMT325S6CFR8C-PB 2GB vs SK Hynix HMT425S6CFR6A-PB 2GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 7% 更低的延时
更快的读取速度，GB/s

10.9 10.1

测试中的平均数值

SK Hynix HMT425S6CFR6A-PB 2GB

需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB

报告一个错误

更快的写入速度，GB/s

7.1 6.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

38 41
读取速度，GB/s

10.9 10.1
写入速度，GB/s

6.6 7.1
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1406 1484

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMD32GX4M4C3200C16 8GB

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Samsung M3 91T2953GZ3-CF7 1GB

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A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

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Corsair CM4B16G2L2666A18K2 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KHX3200C16D4/4GX 4GB

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB