SK Hynix HMT351U6CFR8C-H9 4GB vs G Skill Intl F4-3600C16-8GTESC 8GB

总分

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

总分

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

差异规格评论

差异

SK Hynix HMT351U6CFR8C-H9 4GB

需要考虑的原因
SK Hynix HMT351U6CFR8C-H9 4GB

报告一个错误

G Skill Intl F4-3600C16-8GTESC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTESC 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

20.3 13.7

测试中的平均数值
更快的写入速度，GB/s

18.2 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-3600C16-8GTESC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

13.7 20.3
写入速度，GB/s

8.3 18.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2152 3738

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Samsung M391B5673EH1-CH9 2GB

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Samsung M393A2K40CB2-CTD 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F4-3600C16-8GTESC 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Kllisre M378A1K43BB2-CRC 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

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Corsair CMR16GX4M2C3000C16 8GB

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Kingston HP536727-H41-ELD 4GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Golden Empire CL16-20-20 D4-3200 16GB

Golden Empire CL16-20-20 D4-3200 16GB