RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Transcend Information TS512MSK64W6H 4GB
G Skill Intl F4-3866C18-16GTZR 16GB

Transcend Information TS512MSK64W6H 4GB vs G Skill Intl F4-3866C18-16GTZR 16GB

总分
star star star star star
Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分
star star star star star
G Skill Intl F4-3866C18-16GTZR 16GB

G Skill Intl F4-3866C18-16GTZR 16GB

差异 规格 评论

差异

Transcend Information TS512MSK64W6H 4GB 需要考虑的原因
Transcend Information TS512MSK64W6H 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 15% 更低的延时
G Skill Intl F4-3866C18-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3866C18-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Transcend Information TS512MSK64W6H 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 34
  • 读取速度，GB/s
    12.1 left arrow 17.5
  • 写入速度，GB/s
    8.0 left arrow 17.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1989 left arrow 3697

Transcend Information TS512MSK64W6H 4GB RAM的比较

AMD R538G1601U2S 8GB
Kingston 9905734-003.A00G 32GB

G Skill Intl F4-3866C18-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3400C16-8GVK 8GB
G Skill Intl F4-3400C16-8GVK 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C17-8GTRS 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Essencore Limited KD48GS481-26N1600 8GB
Essencore Limited KD48GS481-26N1600 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM