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Micron Technology 4ATF51264AZ-2G6E1 4GB
A-DATA Technology DDR4 2666 2OZ 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

Micron Technology 4ATF51264AZ-2G6E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G6E1 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 34
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 12.1
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 4ATF51264AZ-2G6E1 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 30
  • 读取速度，GB/s
    16.4 left arrow 16.7
  • 写入速度，GB/s
    12.1 left arrow 12.3
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2616 left arrow 3106

Micron Technology 4ATF51264AZ-2G6E1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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