RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Compare
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB vs Micron Technology 16GB 2133MHz DIMM 16GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Micron Technology 16GB 2133MHz DIMM 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 16GB 2133MHz DIMM 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
37
Around -61% lower latency
Faster reading speed, GB/s
17.3
16
Average value in the tests
Faster write speed, GB/s
13.2
12.6
Average value in the tests
Specifications
Complete list of technical specifications
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
23
Read speed, GB/s
16.0
17.3
Write speed, GB/s
12.6
13.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2808
3233
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16GB 2133MHz DIMM 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
Kingston 99U5471-012.A00 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Kingston 9905403-156.A00LF 2GB
Corsair CMD16GX4M2B3733C17 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CM4X16GE2933C19S2 16MB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
A-DATA Technology DDR2 800G 2GB
Kingston KTP9W1-MID 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
A-DATA Technology DQKD1A08 1GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston KHX1600C9S3L/8G 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Report a bug
×
Bug description
Source link