Samsung M378B5273CH0-CH9 4GB vs Inmos + 256MB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更快的写入速度，GB/s

9.1 8.4

测试中的平均数值
更高的内存带宽，mbps

16800 10600

左右 1.58 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Inmos + 256MB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

13.2 11.5
写入速度，GB/s

8.4 9.1
内存带宽，mbps

10600 16800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

2143 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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