Nanya Technology M2N1G64TUH8D5F-AC 1GB vs A-DATA Technology DDR4 3600 2OZ 8GB

総合得点

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

総合得点

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

相違点仕様コメント

相違点

Nanya Technology M2N1G64TUH8D5F-AC 1GB

考慮すべき理由
Nanya Technology M2N1G64TUH8D5F-AC 1GB

バグを報告する

読み出し速度の高速化、GB/s

2 19

テスト平均値

A-DATA Technology DDR4 3600 2OZ 8GB

考慮すべき理由
A-DATA Technology DDR4 3600 2OZ 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 92

周辺 -268% 低遅延
書き込み速度の高速化、GB/s

14.9 1,266.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2N1G64TUH8D5F-AC 1GB

A-DATA Technology DDR4 3600 2OZ 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

92 25
読み出し速度、GB/s

2,105.4 19.0
書き込み速度、GB/秒

1,266.1 14.9
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

339 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Corsair CM4X4GD3000C15K4 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

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Kingston 99U5474-028.A00LF 4GB

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Kingston KF3200C20S4/16GX 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB