Shenzhen Micro Innovation Industry KF3200DDCD4 16GB vs Kingston KF548C38-16 16GB

总分

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

差异规格评论

差异

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

报告一个错误

更快的读取速度，GB/s

20.5 14.8

测试中的平均数值
更快的写入速度，GB/s

15.5 12.8

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Kingston KF548C38-16 16GB

需要考虑的原因
Kingston KF548C38-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 -7% 更低的延时

规格

完整的技术规格清单

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston KF548C38-16 16GB

主要特点

存储器类型

DDR4 DDR5
PassMark中的延时，ns

31 29
读取速度，GB/s

20.5 14.8
写入速度，GB/s

15.5 12.8
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 38
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz no data / 2400 MHz
排名PassMark (越多越好)

3649 3319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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